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SC8261G LI+ BATTERY PROTECTION CIRCUIT DESCRIPTION SC8261G is a LI+ battery protection circuit. It is suitable for protecting LI+ battery against damage from over charge, over discharge, and over current. It contains high accurate voltage detection and delay circuits. FEATURES * Low supply current * Over-charge detect 4.280V, Over-charge release 4.110V. * Over-discharge detect 3.00V, Over-discharge release 3.00V. * Over-current detect 0.15V, Short Current detect 1.00V. * Overcharge/over-discharge/over-current detection delay * Charger detection * Reset resistance for over current protection * Wide supply voltage range * Small package ORDERING INFORMATION Device SC8261G Package SOT-23-6 Seal 8261G APPLICATIONS * Protection IC for One-Cell LI+ Battery Pack BLOCK DIAGRAM HANGZHOU MICROELECTRONICS CO.,LTD Http:// www.silan.com.cn REV:1.3 2008.09.01 Page 1 of 10 SC8261G ABSOLUTE MAXIMUM RATING Characteristics Supply Voltage OC Output Pin Voltage OD Output Pin Voltage CSI Input Pin Voltage Operating Temperature Range Storage Temperature Range Symbol VDD VOC VOD VCSI TOPR TSTG Value VSS-0.3 ~ VSS+12 VDD-15 ~ VDD+0.3 VSS-0.3 ~ VDD+0.3 VDD-15 ~ VDD+0.3 -40 ~ + 85 -40 ~ +125 Unit V V V V C C ELECTRICAL CHARACTERISTICS (Tamb=25C, unless otherwise specified) Characteristics Operating Voltage Operating Voltage Current Consumption Supply Current Power Down Current Detection Voltage Over Charge Detection Voltage Over Charge Release Voltage Over Discharge Detection Voltage Over Discharge Release Voltage Over Current 1 Detection Voltage Over Current 2(Short Current)Detection Voltage Over Current Reset Resistor Charger Detection Voltage Delay Time Over Charge Detection Delay Time Over Discharge Detection Delay Time Over Current 1 Detection Delay Time Over Current 2(Short Current)Detection Delay Time Other OC Pin Output "H" Voltage OC Pin Output "L" Voltage OD Pin Output "H" Voltage OD Pin Output "L" Voltage Voh1 Vol1 Voh2 Vol2 VDD-0.1 VDD-0.02 0.01 VDD-0.1 VDD-0.02 0.01 0.1 0.1 V V V V TOC TOD TOI1 TOI2 VDD=3.6V~4.4V VDD=3.6V~2.0V VDD=3.6V VDD=3.6V 150 80 5 340 200 13 5 500 300 20 50 ms ms ms s VOCU VOCR VODL VODR VOI1 VOI2 Rshort VCH VDD=3.6V VDD=3.6V 4.255 4.075 2.90 2.90 0.13 0.80 400 -0.8 4.280 4.110 3.00 3.00 0.15 1.00 500 -0.5 4.305 4.145 3.10 3.10 0.17 1.20 600 -0.2 V V V V V V k V IDD IPD VDD=3.9V VDD=2.0V 3.0 0.3 6.0 0.6 A A VDD 1.8 8.0 V Symbol Status Min. Typ. Max. Unit HANGZHOU MICROELECTRONICS CO.,LTD Http:// www.silan.com.cn REV:1.3 2008.09.01 Page 2 of 10 SC8261G PIN CONFIGURATION PIN DESCRIPTIONS PIN No. 1 2 3 4 5 6 Symbol OD CSI OC TD VDD VSS I/O O I/O O I I I Description FET gate connection pin for discharge control. Input pin for current sense, charger detect. FET gate connection pin for charge control. Test pin for reduce delay time. Positive power input pin. Negative power input pin. FUNCTION DESCRIPTIONS Normal Status If VODL HANGZHOU MICROELECTRONICS CO.,LTD Http:// www.silan.com.cn REV:1.3 2008.09.01 Page 3 of 10 SC8261G Release of Power-down mode A charger is connected while the battery remains in Power-down mode. If VCH Http:// www.silan.com.cn REV:1.3 2008.09.01 Page 4 of 10 SC8261G TIMING DIAGRAM Overcharge Status Self Discharging Normal Status Overcharge StatusLoad DischargingNormal Status HANGZHOU MICROELECTRONICS CO.,LTD Http:// www.silan.com.cn REV:1.3 2008.09.01 Page 5 of 10 SC8261G Overcharge StatusCharging By ChargerNormal Status Overcharge StatusAbnormal StatusNormal Status HANGZHOU MICROELECTRONICS CO.,LTD Http:// www.silan.com.cn CSI pin OD pin OC pin Battery voltage REV:1.3 2008.09.01 Page 6 of 10 SC8261G Over Current StatusNormal Status STATE DIAGRAM OF OPERATION HANGZHOU MICROELECTRONICS CO.,LTD Http:// www.silan.com.cn REV:1.3 2008.09.01 Page 7 of 10 SC8261G TYPICAL APPLICATION CIRCUITS Note: The circuit and parameters are reference only, please set the parameters of the real application circuit based on the real test. PACKAGE OUTLINE SOT-23-6 UNIT: mm HANGZHOU MICROELECTRONICS CO.,LTD Http:// www.silan.com.cn REV:1.3 2008.09.01 Page 8 of 10 SC8261G HANDLING MOS DEVICES: Electrostatic charges can exist in many things. All of our MOS devices are internally protected against electrostatic discharge but they can be damaged if the following precautions are not taken: * Persons at a work bench should be earthed via a wrist strap. * Equipment cases should be earthed. * All tools used during assembly, including soldering tools and solder baths, must be earthed. * MOS devices should be packed for dispatch in antistatic/conductive containers. NoteSilan reserves the right to make changes without notice in this specification for the improvement of the design and performance. Silan will supply the best possible product for customers. HANGZHOU MICROELECTRONICS CO.,LTD Http:// www.silan.com.cn REV:1.3 2008.09.01 Page 9 of 10 |
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